Ingxelo yabucala: Ubumfihlo bakho bubaluleke kakhulu kuthi. Inkampani yethu ithembisa ukungazivezi iinkcukacha zakho kuye nakuphi na iimvume zakho.
Umzekelo No.: NSO4GU3AB
Zothutho: Ocean,Air,Express,Land
Uhlobo lokuhlawula: L/C,T/T,D/A
Incoterm: FOB,EXW,CIF
I-4GB 1600mhz 240-i-DDR3 IDRMM
Imbali yoHlaziyo
Revision No. |
History |
Draft Date |
Remark |
1.0 |
Initial Release |
Apr. 2022 |
|
Uku-odola itafile yolwazi
Model |
Density |
Speed |
Organization |
Component Composition |
NS04GU3AB |
4GB |
1600MHz |
512Mx64bit |
DDR3 256Mx8 *16 |
Inkcazo
I-DDR3 SDRM DIMMS (I-UNDFFFFFFFFFFFRY DEAT DEAT I-DEAT DRAMS I-Synchronous Momemes Imodyuli) ngamandla aphantsi, iimodyuli zememori ezihamba ngesantya esiphezulu ezisebenzisa izixhobo zeDDR3 ze-DDR. I-NS04U3B i-512m x 64-bit isikhundla se-4GB ye-4GB DDR3-1600 CL1 1.5v SDMR MRMM ye-DEMRM ye-256m x 8-bit fbga x. I-SPD ilungiselelwe i-jedec lancycy ddr3-1600 yexesha le-11-11-11 kwi-1.5v. I-himm nganye engama-240 isebenzisa iminwe yoqhakamshelwano yegolide. I-SDRAM engadibaniyo ye-DIMM yenzelwe ukuba isetyenziswe njengememori ephambili xa ifakwe kwiinkqubo ezinjengee-PCS kunye neendawo zokusebenzela.
Iimbonakalo
Ubonelelo: VDD = 1.5V (1.425v ukuya kwi-1.575v)
VDDQ = 1.5V (1.425v ukuya kwi-1.575v)
800mhz fck ye-1600MB / sec / iPIN
8 Ibhanki yangaphakathi ezimeleyo
I-ACPERGEgraficy Coltency: 11, 10, 9, 8, 7, 7
I-DEPTEgraphing Latering Lateritive: 0, Cl - 2, okanye i-Cl-1 iwotshi
I-bit8-bit pre-freech
Ubude be-burst
I-strobe yedatha ye-bi-i-strobe
I-calibrication yangaphakathi nge-ZQ iPIN (RZQ: 240 OHM ± 1%)
Ukupheliswa kwe-on kusetyenziswa i-pin ye-ODT
Ixesha lokuvuselela i-7.8US elingaphantsi kwe-85 ° C, 3.9us nge-85 ° C <° C
Ukuseta kwakhona kwakhona
I-chinadoking day-Idatha yokuphuma
fly-nge-topology
I-PCB: Ukuphakama 1.18 "(30mm)
rohs uthobela kwaye i-halogn-mahala
Iiparamitha zexesha eziphambili
MT/s |
tRCD(ns) |
tRP(ns) |
tRC(ns) |
CL-tRCD-tRP |
DDR3-1600 |
13.125 |
13.125 |
48.125 |
2011/11/11 |
Itheyibhile yedilesi
Configuration |
Refresh count |
Row address |
Device bank address |
Device configuration |
Column Address |
Module rank address |
4GB |
8K |
32K A[14:0] |
8 BA[2:0] |
2Gb (256 Meg x 8) |
1K A[9:0] |
2 S#[1:0] |
Inkcazo ye-PIN
Symbol |
Type |
Description |
Ax |
Input |
Address inputs: Provide the row address for ACTIVE commands, and the column |
BAx |
Input |
Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or |
CKx, |
Input |
Clock: Differential clock inputs. All control, command, and address input signals are |
CKEx |
Input |
Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry |
DMx |
Input |
Data mask (x8 devices only): DM is an input mask signal for write data. Input data is |
ODTx |
Input |
On-die termination: Enables (registered HIGH) and disables (registered LOW) |
Par_In |
Input |
Parity input: Parity bit for Ax, RAS#, CAS#, and WE#. |
RAS#, |
Input |
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being |
RESET# |
Input |
Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and |
Sx# |
Input |
Chip select: Enables (registered LOW) and disables (registered HIGH) the command |
SAx |
Input |
Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address |
SCL |
Input |
Serial |
CBx |
I/O |
Check bits: Used for system error detection and correction. |
DQx |
I/O |
Data input/output: Bidirectional data bus. |
DQSx, |
I/O |
Data strobe: Differential data strobes. Output with read data; edge-aligned with read data; |
SDA |
I/O |
Serial |
TDQSx, |
Output |
Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD |
Err_Out# |
Output (open |
Parity error output: Parity error found on the command and address bus. |
EVENT# |
Output (open |
Temperature event: The EVENT# pin is asserted by the temperature sensor when critical |
VDD |
Supply |
Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The |
VDDSPD |
Supply |
Temperature sensor/SPD EEPROM power supply: 3.0–3.6V. |
VREFCA |
Supply |
Reference voltage: Control, command, and address VDD/2. |
VREFDQ |
Supply |
Reference voltage: DQ, DM VDD/2. |
VSS |
Supply |
Ground. |
VTT |
Supply |
Termination voltage: Used for control, command, and address VDD/2. |
NC |
– |
No connect: These pins are not connected on the module. |
NF |
– |
No function: These pins are connected within the module, but provide no functionality. |
AMANQAKU : Itheyibhile yeAp Con ingezantsi luluhlu olubanzi lwazo zonke izikhonkwane zazo zonke iimodyuli ze-DDR3. Zonke izikhonkwane ezidwelisiweyo ayixhaswanga kule modyuli. Jonga izabelo zePIN zolwazi olukhethekileyo kule modyuli.
Umzobo webhloko
I-4GB, i-512MX64 yemodyuli (2rank ye-x8)
Imilinganiselo yemodyuli
Jonga ngaphambili
Jonga ngaphambili
Amanqaku:
1. Imilinganiselo yobungakanani ikwimilimi (i-intshi); UMax / Min okanye oqhelekileyo (uqhekelo) apho kuphawuliwe khona.
2.Ukuphelelwa kuyo yonke imilinganiselo ± 0.15mm ngaphandle kokuba kuchaziwe ngenye indlela.
3.Umzobo we-dimestral kulungiselelwe kuphela.
Iikhathalo zomkhiqizo : Izixhobo zemodyuli zeSmart
Ingxelo yabucala: Ubumfihlo bakho bubaluleke kakhulu kuthi. Inkampani yethu ithembisa ukungazivezi iinkcukacha zakho kuye nakuphi na iimvume zakho.
Gcwalisa ulwazi oluthe kratya ukuze unxibelelane nawe ngokukhawuleza
Ingxelo yabucala: Ubumfihlo bakho bubaluleke kakhulu kuthi. Inkampani yethu ithembisa ukungazivezi iinkcukacha zakho kuye nakuphi na iimvume zakho.