Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

sales@angeltondal.com

86-755-89992216

Shenzhen Hengstar Technology Co., Ltd.
HomeImvelisoIzixhobo zemodyuli zeSmartI-DDR3 IDIMM yemodyuli yemodyuli

I-DDR3 IDIMM yemodyuli yemodyuli

Uhlobo lokuhlawula:
L/C,T/T,D/A
Incoterm:
FOB,EXW,CIF
Min. Myalelo:
1 Piece/Pieces
Zothutho:
Ocean,Air,Express,Land
  • Ingcaciso yeMveliso
Overview
Iimpawu zeMveliso

Umzekelo No.NSO4GU3AB

Amandla okubonelela kunye neNkcukacha ez...

ZothuthoOcean,Air,Express,Land

Uhlobo lokuhlawulaL/C,T/T,D/A

IncotermFOB,EXW,CIF

Ukupakisha kunye nokuhanjiswa
Ukuthengisa iiyunithi:
Piece/Pieces

I-4GB 1600mhz 240-i-DDR3 IDRMM


Imbali yoHlaziyo

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

Uku-odola itafile yolwazi

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


Inkcazo
I-DDR3 SDRM DIMMS (I-UNDFFFFFFFFFFFRY DEAT DEAT I-DEAT DRAMS I-Synchronous Momemes Imodyuli) ngamandla aphantsi, iimodyuli zememori ezihamba ngesantya esiphezulu ezisebenzisa izixhobo zeDDR3 ze-DDR. I-NS04U3B i-512m x 64-bit isikhundla se-4GB ye-4GB DDR3-1600 CL1 1.5v SDMR MRMM ye-DEMRM ye-256m x 8-bit fbga x. I-SPD ilungiselelwe i-jedec lancycy ddr3-1600 yexesha le-11-11-11 kwi-1.5v. I-himm nganye engama-240 isebenzisa iminwe yoqhakamshelwano yegolide. I-SDRAM engadibaniyo ye-DIMM yenzelwe ukuba isetyenziswe njengememori ephambili xa ifakwe kwiinkqubo ezinjengee-PCS kunye neendawo zokusebenzela.


Iimbonakalo
Ubonelelo: VDD = 1.5V (1.425v ukuya kwi-1.575v)
VDDQ = 1.5V (1.425v ukuya kwi-1.575v)
800mhz fck ye-1600MB / sec / iPIN
8 Ibhanki yangaphakathi ezimeleyo
I-ACPERGEgraficy Coltency: 11, 10, 9, 8, 7, 7
I-DEPTEgraphing Latering Lateritive: 0, Cl - 2, okanye i-Cl-1 iwotshi
I-bit8-bit pre-freech
Ubude be-burst
I-strobe yedatha ye-bi-i-strobe
 I-calibrication yangaphakathi nge-ZQ iPIN (RZQ: 240 OHM ± 1%)
Ukupheliswa kwe-on kusetyenziswa i-pin ye-ODT
Ixesha lokuvuselela i-7.8US elingaphantsi kwe-85 ° C, 3.9us nge-85 ° C <° C
Ukuseta kwakhona kwakhona
I-chinadoking day-Idatha yokuphuma
fly-nge-topology
I-PCB: Ukuphakama 1.18 "(30mm)
rohs uthobela kwaye i-halogn-mahala


Iiparamitha zexesha eziphambili

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


Itheyibhile yedilesi

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


Inkcazo ye-PIN

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

AMANQAKU : Itheyibhile yeAp Con ingezantsi luluhlu olubanzi lwazo zonke izikhonkwane zazo zonke iimodyuli ze-DDR3. Zonke izikhonkwane ezidwelisiweyo ayixhaswanga kule modyuli. Jonga izabelo zePIN zolwazi olukhethekileyo kule modyuli.


Umzobo webhloko

I-4GB, i-512MX64 yemodyuli (2rank ye-x8)

1


2


Phawula:
1.I-ZQ ye-ZQ ye-ZQ kwicandelo ngalinye le-DDR3 liqhagamshelwe kwi-240 ± 1% ye-1% ebotshelelwe emhlabeni. Isetyenziselwa ukugcwalisa imeko yokupheliswa kwecandelo kunye nomqhubi wemveliso.



Imilinganiselo yemodyuli


Jonga ngaphambili

3

Jonga ngaphambili

4

Amanqaku:
1. Imilinganiselo yobungakanani ikwimilimi (i-intshi); UMax / Min okanye oqhelekileyo (uqhekelo) apho kuphawuliwe khona.
2.Ukuphelelwa kuyo yonke imilinganiselo ± 0.15mm ngaphandle kokuba kuchaziwe ngenye indlela.
3.Umzobo we-dimestral kulungiselelwe kuphela.

Iikhathalo zomkhiqizo : Izixhobo zemodyuli zeSmart

I-imeyili kule mthengisi
  • *Isihloko:
  • *Ku:
    Mr. Jummary
  • *Imeyili:
  • *Umyalezo:
    Umyalezo wakho kufuneka ube phakathi kweenhlamvu ezingama-20-8000
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